Semiconductor package having electrical connecting structures and fabrication method thereof

ABSTRACT

A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to package structures andfabrication methods thereof, and more particularly, to a QFN (Quad FlatNon-leaded) semiconductor package having electrical connectingstructures and a fabrication method thereof.

2. Description of Related Art

Conventionally, a lead frame is used as a chip carrier for carrying achip so as to form a semiconductor package. The lead frame essentiallycomprises a die pad and a plurality of leads formed at the periphery ofthe die pad. A chip is adhered to the die pad and electrically connectedto the leads through a plurality of bonding wires. The chip, the diepad, the bonding wires and inner sections of the leads are thenencapsulated by a packaging resin so as to form a semiconductor packagehaving a lead frame.

Developing high integration and high density package structures hasbecome a goal of semiconductor industries. Carriers for chip scalepackages generally comprise lead frames, flexible substrates, rigidsubstrates and so on. Therein, lead frames are widely used in chip scalepackages in electronic products due to their low costs and ease inprocessing. For example, a QFN (Quad Flat Non-leaded) package is a leadframe based chip scale package, which is characterized in that the leadsthereof do not extend out from the package sides, thus reducing theoverall package size.

FIG. 1A is a sectional view of a QFN package using a lead frame as achip carrier as disclosed by U.S. Pat. Nos. 6,143,981, 6,130,115 and6,198,171. Referring to FIG. 1A, a chip 12 is disposed on a lead frame10 and electrically connected to leads 11 of the lead frame 10 throughbonding wires 13, and an encapsulant 14 is formed to encasuplate thelead frame 10, the chip 12 and the bonding wires 13, wherein the bottomsurfaces of the lead frame 10 and the leads 11 are exposed from theencapsulant 14 for mounting and electrically connecting an externaldevice such as a printed circuit board through a solder material (notshown).

However, as shown in FIG. 1B, since the exposed surfaces of the leads 11are flush with the encapsulant 14, when solder balls are mounted on theleads 11 for electrically connecting an external printed circuit board,solder bridge is likely to be formed between adjacent solder balls,thereby resulting in poor electrical connection between the package andthe printed circuit board.

FIGS. 2A to 2D show a method for fabricating a QFN package without acarrier as disclosed by U.S. Pat. No. 5,830,800 and U.S. Pat. No.6,498,099.

As shown in FIG. 2A, a plurality of electroplated projections 21 isformed on a copper plate 20 by electroplating.

As shown in FIG. 2B, a chip 22 is mounted on the electroplatedprojections 21 and electrically connected therewith through gold wires23. Then, an encapsulant 24 is formed on the copper plate 20 toencapsulate the electroplated projections 21, the chip 22 and the goldwires 23.

As shown in FIGS. 2C and 2D, the copper plate 20 is removed to exposethe bottom surfaces of the electroplated projections 21 and theencapsulant 24 such that an antioxidiation coating 25 is applied to thebottom surfaces of the electroplated projections 21 and the encapsulant24, the antioxidation coating 25 partially exposing the electroplatedprojections 21. Further, solder balls 26 are mounted on theelectroplated projections 21.

However, as shown in FIG. 2E, due to different CTEs of the antioxidationcoating 25 and the encapsulant 24, delamination is easy to occur to theinterface between the antioxidation coating 25 and the encapsualnt 24.As such, moisture can easily permeate therebetween and thus causeselectrical leakage of the electroplated projections 21, therebyadversely affecting the electrical performance of the package. Further,as shown in FIG. 2C, since the surfaces of the electroplated projections21 are flush with the surface of the encapsulant 24, the surfaces of theelectroplated projections 21 can easily be scratched during thefabrication process. Furthermore, a soldering process or thermal cyclingin practical applications may cause permeation of solder material intothe interface between the antioxidation coating 25 and the encapsulant24, thus resulting in electrical leakage and even short circuit at theinterface.

In addition, if the electroplated projections 21 are located far awayfrom the chip 22, long gold wires 23 are required, which accordinglyincreases the fabrication cost.

Therefore, it is imperative to overcome the above drawbacks of the priorart.

SUMMARY OF THE INVENTION

In view of the above drawbacks of the prior art, the present inventionprovides a semiconductor package having electrical connectingstructures, which comprises: a conductive layer having a die pad and aplurality of traces disposed at the periphery of the die pad, whereinthe traces each comprise a trace body, a finger pad formed at one end ofthe trace body and positioned proximate to the die pad, and a trace endformed at the other end of the trace body and opposite to the fingerpad; a chip mounted on the die pad; a plurality of bonding wireselectrically connecting the chip and the finger pads; an encapsulantencapsulating the chip and the bonding wires, wherein the encapsulanthas a plurality of cavities with a depth greater than a thickness of thedie pad and the traces of the conductive layer for embedding the die padand the traces therein, the cavities allowing the surfaces of the diepad and the traces to be exposed from the encapsulant via the cavities;a solder mask layer formed on the exposed surface of the conductivelayer and a bottom surface of the encapsulant and having a plurality ofopenings formed therein for exposing the trace ends; and a plurality ofsolder balls formed in the openings of the solder mask layer so as toelectrically connect to the trace ends, respectively.

In the above semiconductor package, the difference between the depth ofthe cavities and the thickness of the die pad and the traces of theconductive layer can be in the range of from 2 to 30 micrometers.Further, the finger pads can extend towards the die pad so as to reducethe length of the bonding wires, thereby reducing the packaging cost.

The present invention further provides a fabrication method of asemiconductor package having electrical connecting structures, whichcomprises: providing a metal board with a plurality of substrate units;forming a patterned metal layer on the substrate units; forming aconductive layer on the metal layer, wherein the conductive layer has adie pad and a plurality of traces disposed at the periphery of the diepad, the traces each comprising a trace body, a finger pad formed at oneend of the trace body and positioned proximate to the die pad, and atrace end formed at the other end of the trace body and opposite to thefinger pad; mounting a chip on the die pad and electrically connectingthe chip to the finger pads through bonding wires; forming anencapsulant to cover the chip, the bonding wires and the conductivelayer; removing the metal board and the metal layer so as to expose atleast a portion of a surface of the conductive layer, wherein theencapuslant has a plurality of cavities with a depth greater than thethickness of the die pad and the traces of the conductive layer forembedding the die pad and the traces therein; forming a solder masklayer on the exposed at least a portion of the surface of the conductivelayer and a bottom surface of the encapsulant, and forming a pluralityof openings in the solder mask layer to expose the trace ends; forming aplurality of solder balls in the openings of the solder mask layer,respectively; and singulating the substrate units from each other so asto obtain a plurality of semiconductor packages.

In the above fabrication method, the metal board can be made of copper;the metal layer can be made of one or more materials selected from thegroup consisting of Ni, Sn and Pb; and the metal layer can have athickness between 2 and 30 micrometers.

The fabrication method of the metal layer and the conductive layer cancomprise: forming a resist layer on the metal board and forming aplurality of openings in the resist layer to expose a portion of themetal board; forming the metal layer on the metal board in the openingsof the resist layer; forming the conductive layer on the metal layer inthe openings of the resist layer; and removing the resist layer toexpose the metal board and the metal layer and the conductive layer onthe metal board.

In the above-described semiconductor package and fabrication methodthereof, the size of the trace ends can be greater than that of theopenings of the solder mask layer. The trace ends can be, but notlimited to, of an elliptical shape, a circular shape or a cruciformshape. The conductive layer can be made of one or more materialsselected from the group consisting of Au, Pd and Ni. The conductivelayer can further comprise power pads and ground pads electricallyconnecting to the bonding wires.

In an embodiment, the trace ends can be partially exposed from theopenings of the solder mask layer, respectively, and a portion of theencapsulant can be exposed from the openings of the solder mask layer.Further, a portion of the surface of the die pad can be exposed from theopenings of the solder mask layer.

The present invention further provides another semiconductor packagehaving electrical connecting structures, which comprises: a conductivelayer with a plurality of traces, each of the traces having a tracebody, a contact pad formed at one end of the trace body and positionedproximate to a chip, and a trace end formed at the other end of thetrace body and positioned distal to the chip; the chip flip-chipconnected to the contact pads; an encapsulant encapsulating the chip andthe conductive layer, wherein the encapsulant has a plurality ofcavities with a depth greater than the thickness of the conductive layerfor embedding the conductive layer therein, the cavities allowing atleast a portion of the surface of the conductive layer to be exposedtherefrom; a solder mask layer formed on the exposed surface of theconductive layer and a bottom surface of the encapsulant and having aplurality of openings for exposing the trace ends; and a plurality ofsolder balls formed in the openings of the solder mask layer so as toelectrically connect to the trace ends, respectively.

In the semiconductor package, the difference between the depth of thecavities and the thickness of the conductive layer is in the range of 2and 30 micrometers.

The present invention further provides a fabrication method of asemiconductor package having electrical connecting structures, whichcomprises: providing a metal board with a plurality of substrate units;forming a patterned metal layer on the substrate units; forming aconductive layer on the metal layer, wherein the conductive layer has aplurality of traces each comprising a trace body, a contact padpositioned proximate to one end of the trace body, and a trace endformed at the other end of the trace body and opposite to the contactpad; mounting a chip in a flip-chip manner so as to electrically connectthe chip to the contact pads; forming an encapsulant to cover the chipand the conductive layer; removing the metal board and the metal layerso as to expose the conductive layer, wherein the encapsulant has aplurality of cavities with a depth greater than the thickness of theconductive layer for embedding the traces of the conductive layertherein; forming a solder mask layer on the exposed surface of theconductive layer and the bottom surface of the encapsulant, and forminga plurality of openings in the solder mask layer to expose the traceends; forming a plurality of solder balls in the openings of the soldermask layer, respectively; and singulating the substrate units from eachother so as to obtain a plurality of semiconductor packages.

In the above fabrication method, the metal board can be made of copper;the metal layer can be made of one or more materials selected from thegroup consisting of Ni, Sn and Pb; and the metal layer can have athickness between 2 and 30 micrometers.

The fabrication method of the metal layer and the conductive layercomprises: forming a resist layer on the metal board and forming aplurality of openings in the resist layer to expose a portion of themetal board; forming the metal layer on the metal board in the openingsof the resist layer; forming the conductive layer on the metal layer inthe openings of the resist layer; and removing the resist layer toexpose the metal board and the metal layer and the conductive layer onthe metal board.

In the above semiconductor package and fabrication method thereof, theconductive layer can be made of one or more materials selected from thegroup consisting of Au, Pd and Ni; the size of the trace ends can begreater than that of the openings of the solder mask layer; the traceends can have an elliptical shape, a circular shape or a cruciformshape; the trace ends can be partially exposed from the openings of thesolder mask layer, respectively, and a portion of the encapsulant can beexposed from the openings of the solder mask layer.

According to the present invention, the traces extend towards the diepad so as to reduce the length of the bonding wires. Since the cavitiesof the encapsulant have a depth greater than the thickness of the diepad and the traces of the conductive layer, the solder mask layer andthe encapsulant can be engaged with each other for enhancing theadhesion strength of the solder mask layer. Meanwhile, the solder masklayer can prevent solder bridging from occurring during a thermalprocess. Further, the cavities of the encapsulant having a depth greaterthan the thickness of the die pad and the traces of the conductive layerallow the die pad and the traces to be embedded therein, therebyprotecting the conductive layer from scratching. Furthermore, thebonding between the solder mask layer and the encaspulant as well as theconductive layer in such as a horizontal direction and a verticaldirection, prolong the permeation path of solder material or moistureinto the package. As such, electrical leakage caused by delamination ofthe solder mask layer, moisture permeating into the package, and shortcircuit caused by permeation of solder material in the prior art, can beprevented.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are sectional views showing a conventional QFN packageusing a lead frame as a chip carrier;

FIGS. 2A to 2E are sectional views showing a conventional fabricationmethod of a QFN package without a carrier as disclosed by U.S. Pat. No.5,830,800 and U.S. Pat. No. 6,498,099;

FIGS. 3A to 3H show a fabrication method of a semiconductor packagehaving electrical connecting structures according to an embodiment ofthe present invention, wherein FIG. 3D′ is a top view, FIG. 3D is asectional view of FIG. 3D′ along a dashed line AA therein, FIG. 3G′ is apartially enlarged view of FIG. 3G, FIG. 3H′ is a partially enlargedbottom view of FIG. 3H, and FIG. 3H″ is a sectional view of FIG. 3H′along a dashed line AA therein;

FIGS. 4-1 and 4-2 are bottom views showing different embodiment of traceends and openings of a solder mask layer;

FIG. 5 is a sectional view showing a semiconductor package havingelectrical connecting structures according to another embodiment of thepresent invention; and

FIG. 6 is a sectional view showing a semiconductor package havingelectrical connecting structures according to a further embodiment ofthe present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The following illustrative embodiments are provided to illustrate thedisclosure of the present invention, these and other advantages andeffects can be apparent to those in the art after reading thisspecification.

It should be noted that terms referring to relativity, such as “top” and“bottom”, used in the disclosure are intended to describe relativeconnecting relationship of components in a semiconductor package but arenot intended to limit the scope of the present invention.

FIGS. 3A to 3H show a fabrication method of a semiconductor packagehaving electrical connecting structures according to an embodiment ofthe present invention.

As shown in FIG. 3A, a metal board 30 with a plurality of substrateunits 31 is provided. A resist layer 32 is formed on the metal board 30.A plurality of openings 320 are formed in the resist layer 32 to exposea portion of the metal board 30. In the present embodiment, the metalboard 30 is made of copper.

As shown in FIG. 3B, a metal layer 33 is formed on the exposed portionof the metal board 30 by electroplating, for example. The metal layer 33can be made of copper, or made of one or more materials selected fromthe group consisting of Ni, Sn and Pb. The metal layer 33 can also bemade of an alloy, for example, a binary or ternary alloy. The metallayer 33 is used for providing deeper cavities in an encapsulant to beformed later. Preferably, the metal layer 33 is of a thickness between 2to 30 micrometers.

As shown in FIG. 3C, a conductive layer 34 is formed on the metal layer33 in the openings 320 of the resist layer 32. The conductive layer 34can be made of one or more materials selected from the group consistingof Au, Pd and Ni. For example, the conductive layer 34 can be comprisedof Au/Pd/Ni/Pd layers in sequence or vice versa.

As shown in FIGS. 3D and 3D′, wherein FIG. 3D′ is a top view and FIG. 3Dis a sectional view of FIG. 3D′ along a dashed line AA therein, theresist layer 32 is removed to expose the metal board 30 and the metallayer 33 and the conductive layer 34 on the metal board 30. Therein, theconductive layer 34 is so formed to have a die pad 341 and a pluralityof traces 342 disposed at the periphery of the die pad 341. Inparticular, the traces 342 each comprise a trace body 3421, a finger pad3422 formed at one end of the trace body and positioned proximate to thedie pad 341, and a trace end 3423 formed at the other end of the tracebody and positioned distal to the die pad 341. The conductive layer 34has a top surface 34 a and an opposing bottom surface 34 b. Likewise,the traces 342 each have the top surface 34 a and the opposing bottomsurface 34 b.

As shown in FIG. 3E, a chip 35 is mounted on the die pad 341, and thechip 35 has an active surface 35 a and an opposing inactive surface 35b. The chip 35 is mounted on the die pad 341 via the inactive surface 35b. A plurality of signal pads, power pads, and ground pads are providedon the active surface 35 a of the chip 35 and electrically connected tothe top surfaces 34 a of the finger pads 3422 through a plurality ofbonding wires 36. Then, an encapsulant 37 is formed to cover the chip35, the bonding wires 36 and the conductive layer 34. The finger pads3422 extend towards the die pad 341 so as to reduce the length of thebonding wires 36, thereby reducing the cost.

As shown in FIG. 3F, the metal board 30 and the metal layer 33 areremoved by etching, for example, so as to expose the conductive layer34, and in consequence a plurality of cavities 40 accommodating both thedie pad 341 and the traces 342 are formed in the encapsulant 37. Thecavities 40 thus formed are of a depth greater than the thickness of thedie pad 341 and the traces 342 of the conductive layer 34. As shown inthe drawing, a portion of the encapsulant 37 protrudes between theconductive layer 34 and thus exposed, and the exposed portion of theencapsulant 37 protrudes above the conductive layer 34. In anotherembodiment, the etching process is much easier to control if the metallayer 33 is made of a material other than copper.

As shown in FIG. 3G, a solder mask layer 38 is formed on the exposedportion of the encapsulant 37 and the conductive layer 34 exposed fromthe encapsulant 37, and a plurality of openings 380 is formed in thesolder mask layer 38 to expose the trace ends 3423 and at least aportion of the die pad 341.

As shown in FIG. 3G′, which is a partially enlarged view of FIG. 3G, thedepth H of the cavities 40 is greater than the thickness h of theconductive layer 34. In particular, the difference between the depth Hof the cavities 40 and the thickness h of the die pad 341 and the traces342 of the conductive layer 34 is between 2 and 30 micrometers. Thebonding between the solder mask layer 38 and the encapsulant 37 as wellas the conductive layer 34 prolongs the permeation path of soldermaterial or moisture into the package. As such, electrical leakagecaused by delamination of the solder mask layer, moisture permeatinginto the package, and short circuit caused by solder permeation in theprior art can be prevented.

As shown in FIG. 3H, a plurality of solder balls 39 are each formed in acorresponding one of the openings 380 of the solder mask layer 38, andthe substrate units 31 are singulated from each other by cutting theencapsulant 37, the conductive layer 34, and the solder mask layer 38along the borders of the substrate units 31 so as to obtain a pluralityof semiconductor packages 3. As shown in the drawing, the openings 380of the solder mask layer 38 expose the bottom surfaces of the trace ends3423 and at least a portion of the die pad 341. The solder balls 39 arereceived in the openings 380 of the solder mask layer 38 so as toprevent solder bridging from occurring to the solder balls 39 in thecourse of electrical connection during a thermal process.

Referring to FIGS. 3H′ and 3H″, with the exposed portion of theencapsulant 37′ (as denoted by the hatched area shown in FIG. 3H′)protruding above the conductive layer 34, permeation, if any, of soldermaterial and moisture into the package is stopped by the exposed portionof the encapsulant 37′, thereby efficiently preventing electricalleakage and short circuits. Furthermore, the bonding between the soldermask layer 38 and the conductive layer 34 prolongs the permeation pathof moisture and/or solder material.

In addition, with the conductive layer 34 being engaged with theencapsulant 37, the conductive layer 34 is unlikely to be scratchedinadvertently during the fabrication process, which accordingly improvesthe soldering effect between the solder balls 39 and the conductivelayer 34.

Referring to FIGS. 4-1 and 4-2, there are shown bottom views ofdifferent embodiment of the trace ends 3423 and the openings 380 of thesolder mask layer 38.

Preferably, the size of each of the trace ends 3423 is larger than thatof each of the openings 380 of the solder mask layer 38. To be morespecific, the area of each of the trace ends 3423 shown in the bottomviews of FIGS. 4-1 and 4-2 is greater than that of each of the openings380. Further, the trace ends 3423 are of an elliptical shape, a circularshape, or a cruciform shape. The alteration of the shape of the traceends 3423 is carried out during the process step of forming theconductive layer 34 but is not described herein.

Referring to FIGS. 4-1 and 4-2, the trace ends 3423 are partiallyexposed from the openings 380, respectively. That is, each of the traceends 3423 is partially covered by the solder mask layer 38. As such, thebonding strength between the trace ends 3423 and the encapsulant 37 isenhanced to thereby prevent detachment of the trace ends 3423 from theencapulant 37.

The present invention further provides a semiconductor package havingelectrical connecting structures, which comprises: a conductive layer 34having a top surface 34 a and an opposing bottom surface 34 b, whereinthe conductive layer 34 has a die pad 341 and a plurality of traces 342disposed at the periphery of the die pad 341, the traces 342 eachcomprise a trace body 3421, a finger pad 3422 formed at one end of thetrace body 3421 and positioned proximate to the die pad 341, and a traceend 3423 formed at the other end of the trace body 3421 and positioneddistal to the die pad 341; a chip 35 mounted on the top surface 34 a ofthe die pad 341, wherein the chip 35 has an active surface 35 a and anopposing inactive surface 35 b, the chip 35 is mounted on the die pad341 via the inactive surface 35 b thereof, and the active surface 35 ahas a plurality of signal pads, power pads and ground pads; a pluralityof bonding wires 36 electrically connecting the signal pads, power padsand ground pads of the chip 35 to the top surfaces 34 a of the fingerpads 3422; an encapsulant 37 for encapsulating the chip 35 and thebonding wires 36, wherein the encapsulant 37 has a plurality of cavities40 with a depth greater than the thickness of the die pad 341 and thetraces 342 of the conductive layer 34 for embedding the die pad 341 andthe traces 342 therein, the cavities 40 allowing the bottom surfaces 34b of the die pad 341 and the traces 342 to be exposed therefrom; asolder mask layer 38 formed on the exposed bottom surface 34 b of theconductive layer 34 and a bottom surface of the encapsulant 37 andhaving a plurality of openings 380 formed therein for exposing thebottom surfaces of the trace ends 3423 and a portion of the die pad 341;and a plurality of solder balls 39 formed in the openings 380 of thesolder mask layer 38 so as to electrically connect to the bottomsurfaces 34 b of the trace ends 3423 and portion of the die pad 341.

Therein, the conductive layer 34 can be made of one or more materialsselected from the group consisting of Au, Pd and Ni. For example, theconductive layer 34 can be comprised of Au/Pd/Ni/Pd layers in sequenceor vice versa.

Preferably, the size of each of the trace ends 3423 is larger than thatof each of the openings 380 of the solder mask layer. In addition, thetrace ends 3423 are of an elliptic shape, a circular shape, or acruciform shape.

Referring to FIGS. 4-1 and 4-2, the trace ends 3423 are partiallyexposed from the openings 380, respectively. That is, each of the traceends 3423 is partially covered by the solder mask layer 38. As such, thebonding strength between the trace ends 3423 and the encapsulant 37 isenhanced, which thus prevents detachment of the trace ends 3423 from theencapulant 37.

FIG. 5 shows a semiconductor package having electrical connectingstructures according to another embodiment of the present invention. Thepresent embodiment differs from the above-described embodiment in that,in the present embodiment, a chip 35′ is flip-chip mounted to aconductive layer 34′.

The conductive layer 34′ has a plurality of traces 342 each comprising atrace body 3421, a contact pad 341′ formed at one end of the trace body3421 and positioned proximate to the chip 35′, and a trace end 3423formed at the other end of the trace body 3421 and positioned distal tothe chip 35′. The chip 35′ is mounted on the contact pads 341′.

FIG. 6 shows a semiconductor package having electrically connectingstructures according to another embodiment of the present invention. Theonly difference between FIG. 6 and FIG. 3H is that, as shown in FIG. 6,a conductive layer 34″ in the present embodiment is further providedwith power pads 3424 and ground pads 3425 such that the power pads 3424and the ground pads 3425 are electrically connected to the bonding wires36, respectively. Further, the power pads 3424 and the ground pads 3425are ring-shaped.

Therefore, the present invention forms a metal layer and a correspondingconductive layer on a metal board, mounts a chip on a die pad of each ofthe substrate units, forms an encapsulant for encapsulating thestructure, removes the metal board and the metal layer to expose theconductive layer, forms a solder mask layer on the encapsulant and theconductive layer, and forms a plurality of openings in the solder masklayer to expose the bottom surfaces of the trace ends and a portion ofthe die pad so as to embed the conductive layer in the encapsulant andcover the conductive layer with the solder mask layer, and finally formsa plurality of solder balls in the openings of the solder mask layer tobe electrically connected to the bottom surfaces of the traces andportion of the die pad, thereby preventing soldering bridging fromoccurring to the solder balls in the course of electrical connectionduring a thermal process. Further, since the encapsulant has cavitiesformed after the metal layer is removed, a portion of the solder masklayer can be embedded in the cavities so as to enhance the adhesionstrength of the solder mask layer and prolong the permeation path ofmoisture into the package, thereby preventing electrical leakage causedby delamination of the solder mask layer, moisture permeating into thepackage, and short circuit caused by permeation of solder material inthe prior art.

Furthermore, since the conductive layer is engaged with the encapsulant,the conductive layer is protected from scratching during the fabricationprocess, thereby improving the soldering effect between the solder ballsand the conductive layer. Moreover, the finger pads extending towardsthe die pad reduce the length of bonding wires and thereby reduce thecost.

The above descriptions of the detailed embodiments are only toillustrate the preferred implementation according to the presentinvention, and it is not to limit the scope of the present invention.Accordingly, all modifications and variations completed by those withordinary skill in the art should fall within the scope of presentinvention defined by the appended claims.

1-9. (canceled)
 10. A fabrication method of a semiconductor packagehaving electrical connecting structures, comprising the steps of:providing a metal board with a plurality of substrate units; forming apatterned metal layer on the substrate units; forming a conductive layeron the metal layer, wherein the conductive layer has a die pad and aplurality of traces disposed at a periphery of the die pad, the traceseach comprising a trace body, a finger pad formed at an end of the tracebody and positioned proximate to the die pad, and a trace end formed atanother end of the trace body and positioned distal to the die pad;mounting a chip on the die pad and electrically connecting the chip tothe finger pads through bonding wires; forming an encapsulant to coverthe chip, the bonding wires and the conductive layer; removing the metalboard and the metal layer so as to expose the conductive layer; forminga solder mask layer on bottom surfaces of the conductive layer and theencapsulant to cover the conductive layer and the encapsulant, followedby forming a plurality of openings in the solder mask layer to exposethe trace ends, respectively; forming a plurality of solder balls in theopenings of the solder mask layer, respectively, so as to electricallyconnect the solder pads to the trace ends; and singulating the substrateunits from each other so as to obtain a plurality of semiconductorpackages.
 11. The method of claim 10, wherein the metal board is made ofcopper.
 12. The method of claim 10, wherein the metal layer is made ofcopper.
 13. The method of claim 10, wherein the metal layer is made ofone or more materials selected from the group consisting of Ni, Sn andPb.
 14. The method of claim 10, wherein the conductive layer is made ofone or more materials selected from the group consisting of Au, Pd andNi.
 15. The method of claim 10, wherein the metal layer and theconductive layer are fabricated by the following sub-steps of: forming aresist layer on the metal board, followed by forming a plurality ofopenings in the resist layer to expose a portion of the metal board;forming the metal layer on the exposed portion of the metal board;forming the conductive layer on the metal layer in the openings of theresist layer; and removing the resist layer to expose the metal boardand the metal layer and the conductive layer on the metal board.
 16. Themethod of claim 10, wherein the trace ends are of a size larger than theopenings of the solder mask layer.
 17. The method of claim 10, whereinthe trace ends are of an elliptical shape, a circular shape, or acruciform shape.
 18. The method of claim 10, wherein the trace ends arepartially exposed from the openings of the solder mask layer,respectively.
 19. The method of claim 18, wherein a portion of theencapsulant is exposed from the openings of the solder mask layer. 20.The method of claim 10, wherein at least a portion of a surface of thedie pad is exposed from the openings of the solder mask layer, so as forthe die pad to electrically connect the solder balls via the openings.21. The method of claim 10, wherein the metal layer is of a thicknessbetween 2 and 30 micrometers.
 22. The method of claim 10, wherein theconductive layer further comprises power pads and ground padselectrically connected to the bonding wires.
 23. A semiconductor packagehaving electrical connecting structures, comprising: a conductive layerwith a plurality of traces, the traces each having a trace body, acontact pad formed at an end of the trace body and positioned proximateto a chip, and a trace end formed at another end of the trace body andpositioned distal to the chip; the chip connected to the contact pads ina flip-chip manner; an encapsulant for encapsulating the chip and theconductive layer, wherein the encapsulant has a plurality of cavitiesfor embedding the conductive layer therein, the cavities being of adepth larger than a thickness of the conductive layer and allowing asurface of the conductive layer to be exposed therefrom; a solder masklayer formed on the exposed surface of the conductive layer and a bottomsurface of the encapsulant and having a plurality of openings forexposing the trace ends, respectively; and a plurality of solder ballsformed in the openings of the solder mask layer so as to be electricallyconnected to the trace ends, respectively.
 24. The package of claim 23,wherein the conductive layer is made of one or more materials selectedfrom the group consisting of Au, Pd and Ni.
 25. The package of claim 23,wherein the trace ends are of a size larger than the openings of thesolder mask layer.
 26. The package of claim 23, wherein the trace endsare of an elliptical shape, a circular shape, or a cruciform shape. 27.The package of claim 23, wherein a portion of the trace ends is exposedfrom the openings of the solder mask layer, respectively.
 28. Thepackage of claim 27, wherein a portion of the encapsulant is exposedfrom the openings of the solder mask layer.
 29. The package of claim 23,wherein a difference between the depth of the cavities and the thicknessof the conductive layer is between 2 and 30 micrometers.